1. Two-grating/multiple-grating interference lithography
Mainly used to obtain one-dimensional linear periodic structures and two-dimensional periodic dot matrix or hole structures on photoresists, currently capable of achieving pattern periods ranging from 30nm to 1000nm.
Fig.2 Principle diagram of soft X-ray interference lithography.
2. Talbot lithography
Utilizes the self-imaging effect of gratings for the exposure of photoresists.
Fig.3 Talbot lithography principle.
3. Large-area stitching interference lithography
Based on high-order harmonic alignment technology, this large-scale stitching exposure technique can rapidly realize the fabrication of samples with square centimeter-scale areas.
Fig.4 Large area stitching interference lithography device and exposure sample.
4. Extreme Ultraviolet (EUV) photoresists lithography performance characterizing
Employed for the lithography performance characterizing (resolution, line edge roughness, and sensitivity) of EUV photoresists, it is internationally recognized as the gold standard for evaluating the potential of photoresists.
Fig.5 Evaluation of photoresists lithography performance under different resolution conditions (25nm, 19nm, and 15nm).
5. Preparation of self-traceable nanoscale pitch standards
Achieving the preparation of 106.4 nanometer pitch standards, obtaining the national first-level nanoscale standard certificate, and filling the gap in China for certified grating standards below the 300nm scale.
Fig.6 106.4nm pitch grating prepared by soft X-ray interference lithography and obtained national first-class standard certificate.
6. Micro/nano fabrication support
Providing users with micro/nano periodic structured samples using soft X-ray interference lithography technology.
Fig.7 Preparation of micro-nano periodic structure samples on different substrate materials.
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