Fig.1 Beamline layout
Source | Elliptically Polarized Undulator |
Energy Range | 85~150 eV |
Photon Flux at sample | 2*1014 phs/s |
Beam size at mask | ~2*2 mm2 |
Interference patter period | 30 nm |
Sing exposure area | ~0.4*0.4mm2 |
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Source | Elliptically Polarized Undulator |
Energy Range | 85~150 eV |
Photon Flux at sample | 2*1014 phs/s |
Beam size at mask | ~2*2 mm2 |
Interference patter period | 30 nm |
Sing exposure area | ~0.4*0.4mm2 |
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