A series of molecular EUV resists based on a bis(4-butoxyphenyl) sulfone core attached to a varying number of radiation-sensitive triphenylsulfonium units were designed and synthesized.
The self-traceable Cr grating with a period of 212.8 nm prepared by laser-focused atomic deposition (LFAD) is used as the mask, and the second-order frequency doubling (k=2) of the Cr grating is performed by extreme ultraviolet interference lithography.
