Fig.1 Beamline layout
| Source | Elliptically Polarized Undulator |
| Energy Range | 85~150 eV |
| Photon Flux at sample | 2*1014 phs/s |
| Beam size at mask | ~2*2 mm2 |
| Interference patter period | 30 nm |
| Sing exposure area | ~0.4*0.4mm2 |
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| Source | Elliptically Polarized Undulator |
| Energy Range | 85~150 eV |
| Photon Flux at sample | 2*1014 phs/s |
| Beam size at mask | ~2*2 mm2 |
| Interference patter period | 30 nm |
| Sing exposure area | ~0.4*0.4mm2 |
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